WELDED STAINLESS STEEL CYLINDERS FOR ULTRA-HIGH PURITY MATERIALS (GASES)

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Product Introduction

WELDED STAINLESS STEEL CYLINDERS FOR ULTRA-HIGH PURITY MATERIALS (GASES)

A. MO Source

MO source stands for metal organic source, which is a high-purity compound composed of metal elements and organic ligands. Its purity directly affects the performance of downstream products, mainly including:

No.	Name	Abbreviation	Molecular Formula or Structural Formula	CAS NO.
1	Trimethylaluminum	‌TMAl	Al(CH₃)₃	75-24-1
2	Trisilylamine	TSA	(SiH₃)₃N	13862-16-3
3	Trimethylindium	TMIn	In(CH₃)₃	3385-78-2
4	Trimethyl Gallium	TMG	Ga(CH₃)₃	1445-79-0
5	Triethylgallium	TEG	Ga(C₂H₅)₃	1115-99-7
6	Triethylaluminum	TEAl	(C₂H₅)₃Al	97-93-8
7	Diethylaluminum Ethoxide	DEAlO	(C₂H₅)₂AlOC₂H₅	1586-92-1
8	Triethylamine‌‌	TEA	(C₂H₅)₃N	121-44-8
9	Triethylantimony	‌TESb	Sb(C₂H₅)₃	617-85-6
10	Magnesium Cyclopentadienide	‌Cp₂Mg	Mg(C₅H₅)₂	1284-72-6
11	Ferrocene	Fc	Fe(C₅H₅)₂	102-54-5
12	Cyclohexane‌‌	—	C₆H₁₂	110-82-7
13	Trimethylantimony‌‌	—	Sb(CH₃)₃	594-10-5
14	Dimethylzinc‌‌	—	Zn(CH₃)₂	544-97-8
15	‌Carbon Tetrabromide	—	CBr₄	558-13-4
16	Bromotrichloromethane	—	CBrCl₃	75-62-7
17	Vanadium Tetrakis(dimethylamide)	TDMAV	V(N(CH₃)₂)₄	19824-56-7
18	Hafnium Tetrakis(ethylmethylamide)	TEMAHf	Hf(N(CH₃)(CH₂CH₃))₄	352535-01-4
19	Tetrakis(dimethylamino)titanium(IV)	TDMATi	Ti(N(CH₃)₂)₄	3275-24-9
20	Diethyltelluride‌	DETe	CH₃CH₂-Te-Te-CH₂CH₃‌	627-54-3
21	Diethylzinc	DEZ	Zn(C₂H₅)₂	557-20-0
22	Antimony Trioxide or Diantimony Trioxide‌	ATO	Sb₂O₃	1309-64-4
23	Tris(dimethylamino)silane	TDMAS	SiH(N(CH₃)₂)₃	15112-89-7
24	Tetrakis(dimethylamido)hafnium(IV)	TDMAHf	[(CH₃)₂N]₄Hf	19782-68-4
25	Tetrakis(dimethylamido)zirconium(IV)	TDMAZr	[(CH₃)₂N]₄Zr	19756-04-8
26	Tetrakis(ethylmethylamino)zirconium(IV)	TEMAZr	(CH₃C₂H₅N)₄Zr	175923-04-3
27	Tetrakis(dimethylamino)tin	TDMASn	[(CH₃)₂N]₄Sn	1066-77-9
28	Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)yttrium(III)	Y(TMHD)3	C₃₃H₅₇O₆Y	15632-39-0
29	Pentakis(dimethylamino)tantalum(V)	PDMAT	(N(CH₃)₂)₅Ta	19824-59-0
30	Water	DI water	H₂O	7732-18-5
31	Methylmagnesium Cyclopentadienide	‌MeCpMg	CH₃MgC₅H₅	40672-08-0‌‌
32	Gallium Trichloride	—	GaCl₃	13450-90-3‌‌
33	Tetramethylsilane	TMS	Si(CH₃)₄	75-76-3‌‌
34	tert-Butylphosphine	TBP	(CH₃)₃CPH₂	2501-94-2‌‌
35	Bis(ethylcyclopentadienyl)magnesium	‌EtCp₂Mg	Mg(C₂H₅C₅H₄)₂	114460-02-5‌‌
36	Bis(tert-butylamino)silane	‌BTBAS	SiH₂(NHC(CH₃)₃)₂	186598-40-3‌‌
37	Hexachlorodisilane	‌HCDS	Cl₃Si-SiCl₃	13465-77-5‌‌
38	Chlorosilanes	—	RₙSiCl₄₋ₙ	13465-78-6‌‌
39	Tetrakis(dimethylamido)titanium	‌TDMAT	Ti(N(CH₃)₂)₄	3275-24-9‌‌
40	Tetraethyl Orthosilicate	‌TEOS	Si(OC₂H₅)₄	78-10-4‌‌

Main uses of MO sources

1. Semiconductor field: chemical vapor deposition (CVD) and other processes, phase change memory, semiconductor lasers, radiofrequency integrated circuit chips, etc.

2. Optoelectronics field: manufacturing of devices, such as light-emitting diodes (LEDs) and laser diodes.

3. 5G communication technology.

4. New energy field: preparation of efficient solar cell materials.

5. Smart devices and Internet of Things (IoT) field.

B. Precursor

Precursor refers to the intermediate material form between raw materials and the final product, requiring conversion through calcination, deposition, or other reactions.

a. Classification of precursors

1. High-K dielectric precursors:‌ Feature thermal stability, process reliability, and volatility to reduce device leakage and improve yield.

2. Silicon oxide / nitride precursors:‌ Used in double lithography and sidewall spacers to protect integrated circuit gate properties.

b. Main application areas of precursors

1. Semiconductor manufacturing

Chemical vapor deposition (CVD), atomic layer deposition (ALD), epitaxial growth, etching, ion implantation doping, cleaning, etc.

Metal and metal nitride precursors are used for capacitor electrodes, gate transition layers, isolation materials in semiconductor storage and logic chips, and phase change materials in phase change memory.

2. Lithium-ion battery

It is composed of nickel, cobalt, manganese (or aluminum), which is processed to form positive electrode materials to improve battery energy density and safety.

3. Other fields

Ceramic / glass: Improve sintering performance.

OLED packaging: Moisture barrier for extended device lifespan.

KAIGEN's Advantages:‌

· Industrial ingot segregation simulation

· Ultra-high purity raw material smelting and purification

· High-purity stainless steel industrial preparation

· High-purity material cold processing

· Custom high-purity material solutions

· Physicochemical surface treatments

· Ultra-low precipitation surface technology

If you are concerned about the quality of MO sources, precursors, gases, and other filling media, or you are concerned about the quality of related gas cylinders and packaging materials, please rest assured to choose KAIGEN.